터널링 이론에 관한 레포트

터널링 이론에 관한 레포트

터널링 이론에 관한 레포트.hwp

본문 Folwer-Nordheim (FN) tunneling is the flow of electrons through a triangular potential barrier illustrated in Fig. 1. Tunneling is a quantum mechanical process akin to throwing a ball against a wall often enough that the ball goes through the wall without damaging the wall or the ball. Fig. 1 F-N Tunneling band diagram It also loses no energy during the tunnel event. The probability of this event happening, however, is extremely low, but an electron incident on a barrier typically several nm thick has a high probability of transmission. The FN current IFN is given by the expression I _ FN =A _ G A` _ OX ^ 2 exp( -B over _ OX ^ 2 ) Eq. (1) where AG is the gate area, ox the oxide electric field, and A and B are usually considered to be constants. With ox in units of V/cm, A and B are given by A = q^3 (m/m_ox ) over 8 pih PHI _B =1.54 TIMES10^-6 (m/m_ox ) over PHI _B A overV^2 Eq. (2) B= 8 pi ROOT 2m_ox PHI^3 _B over3qh =6.83 times 10^7 root (m_ox /m) PHI^3 _B V OVERcm Eq. (3) where mox is the effective electron mass in the oxide, m the free electron mass, and B is actually an effective barrier height tha takes in to account barrier height lowering and quantization of electrons at the semiconductor surface. The FN equation is derived under the following assumption. The electrons in the emitting electrode can be described by a free Fermi gas, the electrons in the oxide have a single effective mass mox, and the tunneling probability is derived by taking in to account the component of the electron momentum normal to the interface only. 하고 싶은 말 좀 더 업그레이드하여 자료를 보완하여, 과제물을 꼼꼼하게 정성을 들어 작성했습니다. 위 자료 요약정리 잘되어 있으니 잘 참고하시어 학업에 나날이 발전이 있기를 기원합니다 ^^ 구입자 분의 앞날에 항상 무궁한 발전과 행복과 행운이 깃들기를 홧팅 키워드 레포트, 터널링, 이론